Description
%20Specs.webp)
The Lexar NQ790 512GB PCIe 4.0 NVMe SSD (LNQ790X512G-RNNNG) is a high-performance M.2 drive designed to maximize the potential of the Gen4 interface for faster boot times and professional workloads.
High-Speed PCIe 4.0 Performance: Leverages the PCIe Gen4x4 interface and NVMe 1.4 protocol to deliver significantly faster speeds than Gen3 alternatives.
Intelligent Caching: Utilizes Host Memory Buffer (HMB) 3.0 and Dynamic SLC Cache to maintain high-speed performance during sustained data transfers.
Advanced 3D NAND: Built with high-quality 3D NAND flash to ensure long-term reliability and data integrity.
Power Efficient Design: Features intelligent power control to manage consumption based on the workload, helping to extend laptop battery life.
Wide Compatibility: The slim M.2 2280 form factor fits easily into modern desktop motherboards, high-end laptops, and is PS5 compatible.
Extreme Durability: Rigorously tested for shock and vibration resistance, making it a durable choice for mobile workstations.
Long-Term Reliability: Backed by a 5-year limited warranty and an endurance rating of 300TBW.
Local Stock: Skip the shipping delays & get it today from our PC Superstore in Charmhaven.
Expert Advice: Not sure if this will suit your requirements? Why not drop in and ask our in-store team of Tech Experts!
$149.00
Only 2 left in stock
%20Specs.webp)
| Weight | .06 kg |
|---|---|
| Dimensions | 16 × 11 × 1.5 cm |
The Lexar NQ790 512GB PCIe 4.0 NVMe SSD (LNQ790X512G-RNNNG) is a high-performance PCIe Gen4x4 M.2 NVMe SSD designed for users seeking significant speed improvements over Gen3 drives.
It utilizes HMB 3.0 (Host Memory Buffer) and SLC Cache technology to maintain high transfer rates without the need for a dedicated DRAM chip, making it an efficient choice for both desktop and laptop upgrades.
| Category | Detailed Specification |
| Model Number | LNQ790X512G-RNNNG |
| Form Factor | M.2 2280 |
| Interface | PCIe Gen4 x4 |
| Capacity | 512 GB |
| Max Sequential Read | Up to 6,000 MB/s |
| Max Sequential Write | Up to 3,000 MB/s |
| Max Random Read (4K) | Up to 600,000 IOPS |
| Max Random Write (4K) | Up to 600,000 IOPS |
| NAND Flash | 3D TLC |
| MTBF | 1,500,000 Hours |
| Total Bytes Written (TBW) | 300 TBW |
| Operating Temperature | 0°C to 70°C |
| Storage Temperature | -40°C to 85°C |
| Shock Resistance | 1500G, duration 0.5ms, Half Sine Wave |
| Vibration Resistance | 10~2000Hz, 1.5mm, 20G, 1 Oct/min, 30min/axis (X,Y,Z) |
| Dimensions (L x W x H) | 80 x 22 x 2.45 mm |